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Preparation of gallium nitride (GaN) and related compounds by plasma immersion ion implantation and rapid thermal annealing — Aaron Ho Pui Ho (2001) | RDL Network
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Preparation of gallium nitride (GaN) and related compounds by plasma immersion ion implantation and rapid thermal annealing
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Paul Kim Ho Chu
Preparation of gallium nitride (GaN) and related compounds by plasma immersion ion implantation and rapid thermal annealing
Article
2001
en
Authors
+2 more
AH
Aaron Ho Pui Ho
DK
Dixon T. K. Kwok
XZ
Xiao Cheng Zeng
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