Skip to content
RDL
Network
Ecosystem
Switch app
TR
About
FAQ
Sign in
Get started
Synthesis of beta gallium oxide nano-ribbons from gallium arsenide by plasma immersion ion implantation and rapid thermal annealing — H.P. Ho (2003) | RDL Network
Back
Cite
Save
Save for later
Share
Home
Publications
Synthesis of beta gallium oxide nano-ribbons from gallium arsenide by plasma immersion ion implantation and rapid thermal annealing
Shared by
Paul Kim Ho Chu
Synthesis of beta gallium oxide nano-ribbons from gallium arsenide by plasma immersion ion implantation and rapid thermal annealing
Article
2003
en
Authors
+3 more
HH
H.P. Ho
KL
K.C. Lo
KF
Kai Fu
Discussion
(0)
Sign in
to like and join the discussion.
No comments yet. Be the first to comment.
Related publications
Article
2004
Synthesis of gallium nitride film and gallium oxide nano-ribbons by plasma immersion ion implantation of nitrogen into gallium arsenide
K.C. Lo
,
H.P. Ho
,
Paul Kim Ho Chu
,
Kok‐Wai Cheah
Article
2000
Formation of Gallium Nitride (GaN) Transition Layer by Plasma Immersion Ion Implantation and Rapid Thermal Annealing
Dixon T. K. Kwok
,
Aaron Ho Pui Ho
,
Xiao Cheng Zeng
,
Chi Hou Chan
,
Paul Kim Ho Chu
,
S. P. Wong
Article
2001
Preparation of gallium nitride (GaN) and related compounds by plasma immersion ion implantation and rapid thermal annealing
Aaron Ho Pui Ho
,
Dixon T. K. Kwok
,
Xiao Cheng Zeng
,
Chung Chan
,
Paul Kim Ho Chu
Article
2006
Implantation-assisted synthesis of gallium oxide nanoribbons on gallium arsenide using carbon and nitrogen
K.C. Lo
,
H.P. Ho
,
Kai Fu
,
Paul Kim Ho Chu
Article
1995
Buried oxide formation by plasma immersion ion implantation
Junhong Min
,
Paul Kim Ho Chu
,
Yingchun Cheng
,
J.B. Liu
,
Seongil Im
,
Siddharth Iyer
,
N.W. Cheung
Discussion(0)
No comments yet. Be the first to comment.