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Formation of Gallium Nitride (GaN) Transition Layer by Plasma Immersion Ion Implantation and Rapid Thermal Annealing — Dixon T. K. Kwok (2000) | RDL Network
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Formation of Gallium Nitride (GaN) Transition Layer by Plasma Immersion Ion Implantation and Rapid Thermal Annealing
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Paul Kim Ho Chu
Formation of Gallium Nitride (GaN) Transition Layer by Plasma Immersion Ion Implantation and Rapid Thermal Annealing
Article
2000
en
Authors
+3 more
DK
Dixon T. K. Kwok
AH
Aaron Ho Pui Ho
XZ
Xiao Cheng Zeng
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