Skip to content
RDL
Network
Ecosystem
Switch app
TR
About
FAQ
Sign in
Get started
Investigation on solid phase epitaxy of deposited SiGe film on a Si substrate — Wenjie Qi (1997) | RDL Network
Back
Cite
Save
Save for later
Share
Home
Publications
Investigation on solid phase epitaxy of deposited SiGe film on a Si substrate
Shared by
Paul Kim Ho Chu
Investigation on solid phase epitaxy of deposited SiGe film on a Si substrate
Article
1997
en
Authors
+4 more
WQ
Wenjie Qi
BL
Bing-Zong Li
GJ
Guobao Jiang
Discussion
(0)
Sign in
to like and join the discussion.
No comments yet. Be the first to comment.
Related publications
Article
2002
Observation of solid phase epitaxial growth of amorphous SiGe on Si(100) substrate
Wenqiang Qi
,
B.Z. Li
,
Guobao Jiang
,
Z.G. Gu
,
T.K. Kwok
,
Rudan Zhang
,
Paul Kim Ho Chu
Article
2002
Si/CoSi/sub 2//Si[100] heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy
Xin-Ping Qu
,
Guo-Ping Ru
,
Bing-Zong Li
,
Jie-Qin
,
Zuimin Jiang
,
Paul Kim Ho Chu
Article
2006
Investigation of Relaxed SiGe on Insulator and Strained Si
Weili Liu
,
Chenglu Lin
,
Zengfeng Di
,
Zhitang Song
,
Paul Kim Ho Chu
Article
2006
Investigation of Relaxed SiGe on Insulator and Strained Si
Weili Liu
,
Chenglu Lin
,
Zengfeng Di
,
Zhitang Song
,
Paul Kim Ho Chu
Article
2005
Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure
Zengfeng Di
,
Miao Zhang
,
Weili Liu
,
Ming Zhu
,
Chenglu Lin
,
Paul Kim Ho Chu
Discussion(0)
No comments yet. Be the first to comment.