Investigation of Relaxed SiGe on Insulator and Strained Si

Strained silicon on insulator combines the advantages of strained silicon and SOI and becomes one of important materials in future circuit. In this paper, strained silicon was grown on fully relaxed SGOI substrate fabricated by Ge condensation technology. Raman and TEM results indicate that good quality strained silicon with the ε about 1.8% has formed on the relaxed SGOI substrate.