Si/CoSi/sub 2//Si[100] heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy

A new approach to fabricate Si/CoSi/sub 2//Si heterostructures is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi/sub 2//Si[100] double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, a high quality CoSi/sub 2/ surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.