Silicon-on-Insulator Structure Fabricated by Electron Beam Evaporation of Si on Porous Si and Epitaxial Layer Transfer

Epitaxial monocrystalline Si was grown on porous silicon by ultra-high vacuum electron beam evaporation. Results of reflection high-energy electron diffraction, atomic force microscopy, cross-section transmission electron microscopy and Rutherford backscattering spectrometry and channelling (RBS/C) show that the epitaxial layer is of a good quality. Furthermore, silicon-on-insulator materials were successfully produced by bond and etch back of porous silicon. The quality of the silicon-on-insulator samples was investigated by RBS/C and spreading resistance profiling. Experimental results show that both the crystalline quality and electrical quality are good. In addition, the interface between the top Si layer and SiO2 buried layer is very sharp.