IEEE Journal of Solid-State Circuits 28(4): 490-498
Article 1993 English
Authors
NK
N. Kushiyama
SO
Shigeo Ohshima
DS
D. Stark
Abstract
1 min read
A 512-kb*9 DRAM with a 500-Mbyte/s data transfer rate was developed. This high data rate was achieved by designing a DRAM core with a very high internal column bandwidth, and coupling this core with a block-oriented, small-swing, synchronous interface that uses skew-canceling clocks. The DRAM has a 1-kbyte*2-line sense-amp cache and is assembled in a 32-pin vertical surface-mount-type plastic package. The measurement results clearly verified the 500-Mbyte/s data rate.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
N. Kushiyama, Shigeo Ohshima, D. Stark, Kenji Sakurai, S. Takase, T. Furuyuma, B. Barth, Jeremy Dillon, J.A. Gasbarro, M. Griffin, Mark Horowitz, V. Lee, W. Lee, W.C. Leung
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