500 Mbyte/sec data-rate 512 Kbits*9 DRAM using a novel I/O interface
Article 2003 English
Authors
NK
N. Kushiyama
SO
Shigeo Ohshima
DS
D. Stark
Abstract
1 min read
A novel 512-kb*9 DRAM with a 500-Mbyte/s data transfer rate has been designed. This high data-rate has been achieved by coupling a very high internal column bandwidth DRAM core with a very high internal column bandwidth, and coupling this core with a block oriented, small-swing, synchronous interface that uses skew canceling clocks. The DRAM has a 1-kbyte*2 line sense amplifier cache. This DRAM is assembled in a 32-pin vertical surface mount type plastic package.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
N. Kushiyama, Shigeo Ohshima, D. Stark, H. Noji, Kenji Sakurai, S. Takase, T. Furuyama, R. Barth, A. Chan, Jeremy Dillon, J.A. Gasbarro, M. Griffin, Mark Horowitz, T.H. Lee, V. Lee
N. Kushiyama, Shigeo Ohshima, D. Stark, H. Noji, Kiyofumi Sakurai, S. Takase, T. Furuyama, RichardM. Barth, Andy Chan, John H. Dillon, J.A. Gasbarro, M. Griffin, Mark Horowitz, ThomasH. Lee, LeeVictor
Discussion(0)
No comments yet. Be the first to comment.