The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400 °C) molecular beam epitaxy and electron-beam evaporation — Prabhakar R. Bandaru (2003) | RDL Network
The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400 °C) molecular beam epitaxy and electron-beam evaporation
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