Nearly ideal InP/lnO~53 Ga,-,&s heterojunction regrowth on chemically prepared lno,53 GaO&4s surfaces

When III-V growth is interrupted for processing, in the ambient laboratory environment for example, regrown heterojunction quality has been rather disappointing in comparison to uninterrupted epitaxial growth. We have conducted a search for surface chemical preparations on In,,53G%.47As which would produce the highest-quality InP/Ino.53Ga,,.47As regrown heterojunction interface, as measured by surface recombination velocity (SRV) . After an extensive survey, we have found that dilute bromine-based etching solutions are best for preparing a free Ino.53G%.47 As surface for subsequent InP regrowth. The resulting InP/Ino.53G%,47As interfacial SRV is 5 20 cm/s, comparable to heterojunctions grown without any interruption at all.