Nearly ideal electronic surfaces on naked In0.53Ga0.47As quantum wells

We have discovered that hydroxide-coated In0.53Ga0.47Ag has the lowest known surface recombination velocity of any III-V semiconductor. To demonstrate the excellent electronic quality of such interfaces, we have measured the quantum shifts in the room-temperature luminescence spectrum of ‘‘naked’’ In0.53Ga0.47As quantum wells (i.e., quantum wells with one face uncovered) in the thickness range 15–50 Å. These nearly ideal electronic surfaces should allow the fabrication of lateral quantum confinement structures that operate at room temperature.