Damage accumulation and amorphization in GaAs(100) by MeV Si+ ion implantation at different tilt angles have been studied using the Rutherford backscattering and channeling technique. It was found that the total amount of damage increases linearly with the implant dose at doses less than the threshold dose for amorphization. Layer by layer amorphization was observed at doses higher than the, threshold dose. The damage distribution is strongly influenced by the target tilt angle. With an increase in the implant tilt angle, the damage level decreases. A model for the damage accumulation and amorphization is discussed.
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