DAMAGE FORMATION IN SI(100) INDUCED BY MEV SELF-ION IMPLANTATION

Damage formation in Si(100) induced by MeV self-ion implantation was studied using the Rutherford backscattering and channeling technique. Damage accumulations were found to be produced mainly near the ions' end of range. Two distinct regions were observed for dose dependence upon damage. One is for low doses, in which the damage increases slowly with dose. The second region is for high-dose implantation, in which the damage increases rapidly as the dose increases. Beam self-annealing was found in MeV Si ion implanted Si(100). The effects of the energy depositions on the defect production are also discussed.