[1] We calculate temperature and pore pressure rises along a steadily propagating shear crack, assuming a given shear stress profile along the crack (i.e., initially neglecting effects of pore pressure on shear stress). In the limit of a singular crack, temperature and pore pressure rises are a step function in time. We verify that pore pressure can indeed be neglected at the tip and in the cohesive zone of the crack in the case of strong velocity weakening of the friction coefficient (e.g., as governed by flash heating of asperities, like analyzed in a recent numerical simulation of spontaneous rupture). In such cases, the local fracture energy needed to increase the crack length is thus likely to be governed by "dry" frictional processes with effective slip weakening distance of the order of 20 μm, while thermal pressurization may affect the later stages of slip and hence the overall fracture energy attributed to the propagating rupture.
Semiconductor nanowires (NWs)represent an ideal system for investigating low-dimensional physics and are expected to play an important role as both interconnects and functional device elements in nanoscale electronic and optoelectronic devices. Here we review a series of key advances defining a new paradigm of bottom-up assembling integrated nanosystems using semiconductor NW building blocks. We first introduce a general approach for the synthesis of a broad range of semiconductor NWs with precisely controlled chemical composition, physical dimension, and electronic, optical properties using a metal cluster-catalyzed vapor-liquid-solid growth mechanism. Subsequently, we describe rational strategies for the hierarchical assembly of NW building blocks into functional devices and complex architectures based on electric field or micro-fluidic flow. Next, we discuss a variety of new nanoscale electronic device concepts including crossed NW p-n diode and crossed NW field effect transistors (FETs). Reproducible assembly of these scalable crossed NW device elements enables a catalog of integrated structures, including logic gates and computational circuits. Lastly, we describe a wide range of photonic and optoelectronic devices, including nanoscale light-emitting diodes (nanoLEDs), multicolor LED arrays, integrated nanoLED-nanoFET arrays, single nanowire waveguide, and single nanowire nanolaser. The potential application of these nanoscale light sources for chemical and biological analyses is discussed.
We analyze the growth of cavities along grain interfaces by the combined processes of grain boundary diffusion and plastic dislocation creep in the adjoining grains. It is shown that the coupling between the processes can be expressed in terms of a parameter L, which has the dimensions of length and which is a function of material properties, temperature and applied stress; L decreases with increasing temperature and stress and has, e.g., values in the range of 0.25 to 25 μm for various pure metals when stressed to 10−3 × shear modulus at 0.5 T m . The contribution of dislocation creep to the cavity growth rate is shown to be negligible when L is comparable to or larger than the cavity spacing, but significant interactions occur, leading to growth rates very much in excess of those predicted on the basis of boundary diffusion alone, when L is comparable to or smaller than the cavity size. The coupling occurs because extensive dislocation creep allows local accommodation of matter diffused into the grain boundary from the cavity walls. The cavity growth rate is analyzed by formulating a new variational principle that governs combined processes of grain boundary diffusion and non-linear viscous creep, and by implementing this principle through the finite-element method to obtain numerical solutions. Results for the cavity growth rate are presented for a wide range of ratios of L to cavity spacing, and of cavity radius to spacing. Also, results are presented for the total growth time of cavities from an initial size to final coalescence.
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTA new approach to cyclitols based on rabbit-muscle aldolase (RAMA)Walther Schmid and George M. WhitesidesCite this: J. Am. Chem. Soc. 1990, 112, 26, 9670–9671Publication Date (Print):December 1, 1990Publication History Published online1 May 2002Published inissue 1 December 1990https://pubs.acs.org/doi/10.1021/ja00182a054https://doi.org/10.1021/ja00182a054research-articleACS PublicationsRequest reuse permissionsArticle Views209Altmetric-Citations51LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-AlertscloseSupporting Info (1)»Supporting Information Supporting Information Get e-Alerts
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