Recent scanning tunneling microscopy studies of the intrinsic electronic properties of single-walled carbon nanotubes (SWNTs) are overviewed in this Account. A brief theoretical treatment of the electronic properties of SWNTs is developed, and then the effects of finite curvature and broken symmetry on electronic properties, the unique one-dimensional energy dispersion in nanotubes, the interaction between local spins and carriers in metallic nanotubes systems, and the atomic structure and electronic properties of intramolecular junctions are described. The implications of these studies for understanding fundamental one-dimensional physics and future nanotube device applications are also discussed.
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTUnconventional Methods for Fabricating and Patterning NanostructuresYounan Xia, John A. Rogers, Kateri E. Paul, and George M. WhitesidesView Author Information Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, and Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138 Cite this: Chem. Rev. 1999, 99, 7, 1823–1848Publication Date (Web):May 19, 1999Publication History Received15 September 1998Revised15 March 1999Published online19 May 1999Published inissue 1 July 1999https://pubs.acs.org/doi/10.1021/cr980002qhttps://doi.org/10.1021/cr980002qresearch-articleACS PublicationsCopyright © 1999 American Chemical SocietyRequest reuse permissionsArticle Views12534Altmetric-Citations1421LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-Alertsclose SUBJECTS:Chemical structure,Lithography,Manufacturing,Nanostructures,Quantum mechanics Get e-Alerts
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTPhase behavior of two-component self-assembled monolayers of alkanethiolates on goldJohn P. Folkers, Paul E. Laibinis, George M. Whitesides, and John DeutchCite this: J. Phys. Chem. 1994, 98, 2, 563–571Publication Date (Print):January 1, 1994Publication History Published online1 May 2002Published inissue 1 January 1994https://pubs.acs.org/doi/10.1021/j100053a035https://doi.org/10.1021/j100053a035research-articleACS PublicationsRequest reuse permissionsArticle Views964Altmetric-Citations216LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsSupporting Info (1)»Supporting Information Supporting Information Get e-Alerts
In order to detect possible urinary tract abnormalities among wetters, assessments of previous history completed by ultrasonography of the urinary tract and uroflowmetry were obtained for 145 wetting children and a random sample of 156 sex-matched non-wetting children drawn from a population of 3,375 seven-year-olds. Ultrasonography revealed abnormalities, including both morphological ones and cases with incomplete bladder emptying, in 5 out of 73 nightwetters (6.8%, 95% confidence limit, CL, 1.1-12.6), 10 out of 72 day and day and nightwetters (hereafter daywetters) (13.9%, CL 5.9-21.9) and 4 controls (2.6%, CL 0.1-5.0), the figure for the daywetters differing significantly from that for the controls (p less than 0.01). A fractioned voiding curve was recognized in 1 nightwetter (1.4%, CL -1.3-4.0), 7 daywetters (9.7%, CL 2.9-16.6) and 7 controls (4.5%, CL 1.2-7.7) the difference between the nightwetters and daywetters being significant (p less than 0.05). Depending on the previous history and abnormal findings in ultrasonography or uroflowmetry, examinations were continued with intravenous pyelography, voiding cystography, cystoscopy and/or by cystometry. Finally, marked structural or functional disorders of the urinary tract were detected in 11 out of 72 daywetters (15.3%, CL 7.0-23.6), 1 out of 73 pure nightwetters and 1 out of 156 control children. It is concluded that imaging of the urinary tract is not necessary for pure nightwetters, while ultrasonography or uroflowmetry and more sophisticated radiological or urological methods should be focused on those children with daytime wetting and clinical symptoms of voiding disturbances.
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Semiconductor nanowires (NWs) represent a unique system for exploring phenomena at the nanoscale and are also expected to play a critical role in future electronic and optoelectronic devices. Here we review recent advances in growth, characterization, assembly and integration of chemically synthesized, atomic scale semiconductor NWs. We first introduce a general scheme based on a metal-cluster catalyzed vapour–liquid–solid growth mechanism for the synthesis of a broad range of NWs and nanowire heterostructures with precisely controlled chemical composition and physical dimension. Such controlled growth in turn results in controlled electrical and optical properties. Subsequently, we discuss novel properties associated with these one-dimensional (1D) structures such as discrete 1D subbands formation and Coulomb blockade effects as well as ballistic transport and many-body phenomena. Room-temperature high-performance electrical and optical devices will then be discussed at the single- or few-nanowire level. We will then explore methods to assemble and integrate NWs into large-scale functional circuits and real-world applications, examples including high-performance DC/RF circuits and flexible electronics. Prospects of a fundamentally different 'bottom-up' paradigm, in which functionalities are coded during growth and circuits are formed via self-assembly, will also be briefly discussed.
Semiconductor nanowires refer to crystal structures with diameters as small as a few nanometers and lengths up to tens of micrometers or even millimeters. Nanowires can be produced either through conventional subtractive nanofabrication processes, via lithography and etching, or through additive nanomaterial growth methods. The quality of “top-down” fabricated nanowires are in principle determined by the starting material, although the size reduction techniques used to fabricate these structures inevitably introduce damage (e.g., roughness) that can degrade overall quality. The top-down approach, which relies heavily on the precision of the lithography and etching tools, also becomes less cost-effective when scaling to ca. 10 nm size regimes. In this chapter we focus on nanowires produced through “bottom-up” growth methods, in which the critical dimension (e.g. the nanowire diameter) is limited not by lithography precision but controlled during chemical synthesis with atomic resolution. In particular, the catalyst-mediated vapor–liquid–solid (VLS) process is discussed in detail since this approach enables the growth of a broad range of nanowire materials with controlled structure, morphology, composition, and doping.
