4,218 publications from this institution
Abstract Mechanical system with adjustable stiffness and damping (ASAD) shows great potential in vibration suppression of aircraft, vehicle, precise instrument, etc. However, current ASAD systems consist of power, sensing, and controlling components, which bring huge challenges of system reliability and integrability, and critically limit its application diversity. Herein, we proposed the first strategy for regulating ASAD system that is system simplification, self‐powered and no‐delay by deeply coupling triboelectric nanogenerator (TENG) and electrorheological fluid (ERF). Under the time‐varying mechanical triggering, the local and time correlated output of TENG instantaneously applied on the ERF regulates the entire mechanical system dynamically and “in‐phase”. As an illustration, the resonance of a cantilever system is effectively suppressed naturally without complicated controlling strategy, and the vibration isolating efficiency reaches up to 85.2%. Finally, a mechanical transmission system is demonstrated utilizing a rotary TENG and ERF, excellent soft‐start performance is enabled by this self‐regulating ASAD strategy. This work may provide the opening arsenal of methodologies used in self‐powered and self‐regulating mechanical systems.
Impurity doping is the most important technique to functionalize semiconductor nanowires. The crucial point is how the states of impurity atoms can be detected. The chemical bonding states and electrical activity of boron (B) and phosphorus (P) atoms in germanium nanowires (GeNWs) are clarified by micro-Raman scattering measurements. The observation of B and P local vibrational peaks and the Fano effect clearly demonstrate that the B and P atoms are doped into the crystalline Ge region of GeNWs and electrically activated in the substitutional sites, resulting in the formation of p-type and n-type GeNWs. This method can be a useful technique for the characterization of semiconductor nanowire devices. The B-doped GeNWs showed an increasingly tapered structure with increasing B concentration. To avoid tapering and gain a uniform diameter along the growth direction of the GeNWs, a three step process was found to be useful, namely growth of GeNWs followed by the deposition of an amorphous Ge layer with high B concentration and then annealing.