Two‐Dimensional Heterostructure Complementary Logic Enabled by Optical Writing

Integrated logic circuits using atomically thin, two-dimensional (2D) materials offer several potential advantages compared to established silicon technologies such as increased transistor density, circuit complexity, and lower energy dissipation leading to scaling benefits. In this article, a novel approach to achieve tunable doping in 2D semiconductors is explored to achieve complementary transistors and logic integration. By selectively transferring WSe₂ onto hBN and SiO₂ substrates, complementary transistor behavior (n- and p-type) was achieved using a UV light source and electrostatic activation. Furthermore, advanced characterization techniques, including high-resolution transmission electron microscopy (HRTEM) and Kelvin probe force microscopy (KPFM), provided insights into the chemical composition and surface potential changes after UV writing. Finally, a logic inverter was successfully implemented using selectively photo-induced doped WSe₂ transistors, showcasing the potential for practical logic applications. This innovative method opens new avenues for designing energy-efficient and reconfigurable 2D semiconductor circuits, addressing key challenges in modern electronics.