Topological van der Waals Contact for Two-Dimensional Semiconductors

Soheil Ghods; Hyunjin Lee; Jun‐Hui Choi; Ji‐Yun Moon; Sein Kim; Seung‐Il Kim; Hyung Jun Kwun; Mukkath Joseph Josline; Chan Young Kim; Sang Hwa Hyun; Sang Won Kim; Seok‐Kyun Son; Taehun Lee; Youn‐Kyoung Lee; Keun Heo; Konstantin ‘kostya’ Novoselov; Jae‐Hyun Lee

doi:10.1021/acsnano.4c07585

Abstract

1 min read

The relentless miniaturization inherent in complementary metal-oxide semiconductor technology has created challenges at the interface of two-dimensional (2D) materials and metal electrodes. These challenges, predominantly stemming from metal-induced gap states (MIGS) and Schottky barrier heights (SBHs), critically impede device performance. This work introduces an innovative implementation of damage-free Sb

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Editorial Material2012

Preface to the Special Section on Piezotronics

Zhong Lin Wang