The transconductance of a nano-clustered subsurface layer in Si+-implanted PMMA

The transconductance of a nano-clustered organic subsurface layer of a thickness of about 100 nm, formed in polymethylmethacrylate (PMMA) by implantation with silicon ions at an energy of 50 keV, is examined as a function of the Si + fluence in the range 10 15 -10 17 cm -2 . Depending on the implantation regime, the ion-modified region of the Si + -implanted PMMA exhibits a transconductance and a field effect that can be used for electronic applications.