The properties of organic polymers implanted with low-energy ions are of scientific and practical interest. In this work, we consider the nanostructure produced in the near-surface region of polymethylmethacrylate (PMMA) implanted with silicon (Si + ) ions at energy of 50 keV and ion fluence of 10 16 ions/cm 2 . By controlled local chemical modification in a depth of 150 – 200 nm, in PMMA was created a nano-thin bi-layer configuration consisting of ion-modified layer and ion-implanted layer with carbonaceous nanostructure. Such complex nanoscale arrangement and organic transconductance configuration was characterized by direct current electrical measurements. The field-effect configuration in Si + -implanted PMMA was driven through the formed ion-implanted buried planar layer (as a channel with a thickness of about 100 nm) of nanoclustered amorphous carbon as an organic semiconductor. The values of performance parameters, such as the charge carrier mobility, contact resistance and gate leakage current of this particular type of organic field-effect transistor configuration were determined.
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