Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser‐Assisted Reaction

Eunpa Kim; Changhyun Ko; Kyunghoon Kim; Yabin Chen; Joonki Suh; Sang‐Gil Ryu; Kedi Wu; Xiuqing Meng; Aslıhan Süslü; Sefaattin Tongay; Junqiao Wu; Costas P. Grigoropoulos

doi:10.1002/adma.201503945

Abstract

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Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS2 and p-type WSe2 . Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.

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Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser‐Assisted Reaction

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