Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique

Significant recent progress has been achieved in the fabrication of tunnel field-effect transistors (TFETs) utilizing transition metal dichalcogenides (TMDCs) materials, particularly focusing on out-of-plane heterojunction structures. Due to the inherent limitations of doping technology for TMDCs, there have been limited investigations into the development of in-plane TFETs. In this study, we present the realization of an in-plane TFET based on a single crystal of multilayer MoTe2, utilizing a regioselective doping technique through laser irradiation. By constructing a p+/i/n++ homojunction structure, a band-to-band tunneling dominated performance with a minimum subthreshold swing value of 75 mV/dec and an on/off ratio of 105 was obtained at a low temperature. Furthermore, the “OFF” and “ON” state currents of the TFET operation were smaller than the gated diode operation in this structure, which is consistent with the tunneling mechanism.