Schottky-barrier height of In 0.43 Al 0.57 As

Paul Kim Ho Chu; Chia‐Liang Lin; H. H. Wieder

doi:10.1049/el:19860607

Abstract

1 min read

The Schottky-barrier height of n-type In0 43Al0.57As grown by molecular-beam epitaxy on (100)-oriented n-type InP substrates measured by capacitance/voltage and internal photoemission measurements is φBn = 1.2 ± 0.1 eV, comparable to that of AlAs and substantially larger than that of In0.52Al0.48As.

Discussion(0)

No comments yet. Be the first to comment.

Related publications

Article1988

Schottky barrier height of InxAl1−xAs epitaxial and strained layers

Paul Kim Ho Chu, Chia‐Liang Lin, H. H. Wieder

Article1986

Composition dependence of Au/InxAl1−xAs Schottky barrier heights

Chia‐Liang Lin, Paul Kim Ho Chu, Albert L. Kellner, H. H. Wieder, E. A. Rezek

Article1988

Properties of strained layer InxAl1−xAs/InP heterostructures

Paul Kim Ho Chu, H. H. Wieder

Article2002

Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition

Ho Won Jang, Jung‐Hee Lee, Jong‐Lam Lee

Article2018

Modulating Schottky Barrier of MoS2 to Enhance Hydrogen Evolution Reaction Activity by Incorporating with Vertical Graphene Nanosheets Derived from Organic Liquid Waste

Angjian Wu, Aoni Xu, Jian Yang, Xiaodong Li, Li Wang, Jingfan Wang, Digby D Macdonald, Jianhua Yan

Schottky-barrier height of In <sub>0.43</sub> Al <sub>0.57</sub> As

Abstract

Discussion(0)

Related publications

Schottky barrier height of In<i>x</i>Al1−<i>x</i>As epitaxial and strained layers

Composition dependence of Au/In<i>x</i>Al1−<i>x</i>As Schottky barrier heights

Properties of strained layer In<i>x</i>Al1−<i>x</i>As/InP heterostructures

Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition

Modulating Schottky Barrier of MoS<sub>2</sub> to Enhance Hydrogen Evolution Reaction Activity by Incorporating with Vertical Graphene Nanosheets Derived from Organic Liquid Waste