Schottky barrier height of In<i>x</i>Al1−<i>x</i>As epitaxial and strained layers

The Schottky barrier height of n-type semiconducting and semi-insulating InxAl1−xAs grown by molecular beam epitaxy has been determined on the lattice-matched composition, x=0.523, in tension and in compression relative to their (110) oriented InP substrates. For the semiconducting material in the composition range 0.43&amp;lt;x&amp;lt;0.62, the barrier height is φbn=0.62±0.05 eV while the anomalous rise and saturation of φbn at 1.2 eV of the semi-insulating material, within the same composition range, is attributed to the presence of AlAs clusters within an InxAl1−xAs matrix.