Reverse-Recovery Analysis of Parallel-Connected pin Diodes Using a Physics-Based Device Model

SUMMARY This paper presents a reverse‐recovery analysis of parallel‐connected pin diodes using a physics‐based device model. Since the pin diode model is based on a physical equation, the excess carrier distribution in the drift layer is estimated. A precise device model enables us to understand the transient characteristics of the parallel‐connected pin diodes. We investigated the reverse‐recovery characteristics of parallel‐connected pin diodes by using a physics‐based pin diode model. A difference in the wiring inductance or device temperature between the two pin diodes causes a transient current imbalance. Complicated reverse‐recovery current waveforms are observed under both conditions—a difference in the wiring inductance and a difference in the device temperature. They result from a difference in the starting time of forming each depletion layer between the two pin diodes. Simulation results are in good agreement with experimental ones within an error of 10% in terms of the reverse‐recovery loss. We find that a precise physics‐based pin diode model is very useful when designing a power electronics apparatus.