In article number 2003225, Soo Young Kim, Ho Won Jang, and co-workers successfully fabricate preconditioned resistive switching memory devices using lead-free dual-phase halide perovskites. The devices show filamentary resistive switching behavior involving Ag cations in halide perovskites with ultra-low operating voltages, and high on/off ratio.
Ji Su Han, Quyet Van Le, Hyojung Kim, Yoon Jung Lee, Da Eun Lee, In Hyuk Im, Min Kyung Lee, Seung Ju Kim, Jaehyun Kim, Kyung Ju Kwak, Min‐Ju Choi, Sol A Lee, Kootak Hong, Soo Young Kim, Soo Young Kim, Ho Won Jang
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