Data Storage: Air‐Stable Cesium Lead Iodide Perovskite for Ultra‐Low Operating Voltage Resistive Switching (Adv. Funct. Mater. 5/2018)

Cesium lead iodide (CsPbI3) perovskite, an all-inorganic halide perovskite, is synthesized on a platinum-coated silicon substrate for an ultra-low operating voltage resistive switching memory device by Soo Young Kim, Ho Won Jang, and co-workers in article number 1705783. An electrochemical metallization mechanism involving metal conducting filaments is proposed to explain the resistive switching behavior which can be applied to next-generation synaptic devices.