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Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors — Hyojung Kim (2024) | RDL Network
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Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors
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Ho Won Jang
Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors
Article
2024
en
Authors
+10 more
HK
Hyojung Kim
MC
Min-ju Choi
JS
Jun Min Suh
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Related publications
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2024
Resistive Random-Access Memories Using Quasi-2d Halide Perovskites for Wafer-Scale Reliable Switching Behaviors
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