Skip to content
RDL
Network
Ekosistem
Uygulama değiştir
EN
Hakkımızda
SSS
Giriş yap
Başla
Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors — Hyojung Kim (2024) | RDL Network
Back
Cite
Save
Save for later
Share
Home
Publications
Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors
Shared by
Ho Won Jang
Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors
Article
2024
en
Authors
+10 more
HK
Hyojung Kim
MC
Min-ju Choi
JS
Jun Min Suh
Discussion
(0)
Sign in
to like and join the discussion.
No comments yet. Be the first to comment.
Related publications
Preprint
2024
Resistive Random-Access Memories Using Quasi-2d Halide Perovskites for Wafer-Scale Reliable Switching Behaviors
Hyojung Kim
,
Cheon Woo Moon
,
Min-ju Choi
,
Jun Min Suh
,
Young‐Seok Shim
,
Seok Joo Yang
,
Soo Young Kim
,
Ho Won Jang
Article
2019
Halide perovskites for resistive random-access memories
Hyojung Kim
,
Ji Su Han
,
Sun Gil Kim
,
Sun Gil Kim
,
Soo Young Kim
,
Soo Young Kim
,
Ho Won Jang
Article
2020
Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109
Hyojung Kim
,
Min‐Ju Choi
,
Jun Min Suh
,
Ji Su Han
,
Sun Gil Kim
,
Quyet Van Le
,
Soo Young Kim
,
Ho Won Jang
Article
2017
Organolead halide perovskites for low voltage resistive switching memories (Conference Presentation)
Ho Won Jang
Article
2020
2D and Quasi‐2D Halide Perovskites: Applications and Progress
Hyojung Kim
,
Kim Anh Huynh
,
Soo Young Kim
,
Quyet Van Le
,
Ho Won Jang
Discussion(0)
No comments yet. Be the first to comment.