Organolead halide perovskites for low voltage resistive switching memories (Conference Presentation)

We report multilevel resistive switching using an organolead halide perovskite (OHP). Solution-processed 400 nm thick CH3NH3PbI3 films with Ag top and Pt bottom electrodes exhibited electroforming-free resistive switching with a low SET voltage of ~0.13 V and high ON/OFF ratios of ≈10^6 under ±0.15 V pulses. Based on these extraordinary properties, four-level storage capability of the CH3NH3PbI3-based devices was demonstrated. We attributed the high performance resistive switching behavior of the CH3NH3PbI3-based devices to the energetically benign migration of anions defects, but further studies are needed to identify the mechanism responsible for the ultralow electric field resistive switching. Enhancements in switching speed, endurance, and retention are also necessary and may be achieved by controlling the doping concentration, crystallinity, and large area compositional uniformity of the OHP film. The inherent structural flexibility and the number of possible combinations for ABX3-type OHPs will support intensive studies for other electronic device applications beyond resistive switching memories. Finally, we believe that the solution-processed CH3NH3PbI3-based cells are promising for microelectronics built on flexible substrates.