Abstract
1 min readReflection high-energy electron diffraction (RHEED) is a powerful technique for in situ observation of thin film growth in molecular beam epitaxy (MBE). The technique is particularly useful for providing in situ real-time structure evolution during thin film growth, and it is becoming an indispensable technique for characterizing phase transformation in synthesizing new materials of technological importance. In this chapter, we will apply the kinematical diffraction theory introduced in Chapter 1 to describe the fundamental characteristics of RHEED and its applications in determining surface structures. RHEED oscillation and its applications for monitoring film growth are systematically described. This remarkable phenomenon allows layer-by-layer monitoring of thin film growth.
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