Two-Step Molecular Beam Epitaxy Growth of Bismuth Telluride Nanoplate Thin Film with Enhanced Thermoelectric Properties

Zhong Lin Wang; Xia Zhang; Zhi Zeng; Zhou Zhang; Zhiyu Hu

doi:10.1149/2.0041408ssl

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Two-Step Molecular Beam Epitaxy Growth of Bismuth Telluride Nanoplate Thin Film with Enhanced Thermoelectric Properties

Article 2014 en

Abstract

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Bi2Te3 thin film composed of single-crystal nanoplates was fabricated on Si substrate by a modified two-step molecular beam epitaxy (MBE) method. The possible growth mechanism was suggested based on the scanning electron microscopy observations. Its thermoelectric properties were obtained at room-temperature with electrical conductivity (313.07 S·cm−1) and Seebeck coefficient (−163.44 μV·K−1) respectively enhanced by 74.80% and 71.70% than the reference sample prepared by ordinary MBE method.

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Two-Step Molecular Beam Epitaxy Growth of Bismuth Telluride Nanoplate Thin Film with Enhanced Thermoelectric Properties

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