Recent research work on plasma immersion ion implantation of semiconductors

Plasma immersion ion implantation (PIII) has attracted much interest as both an R&D and production tool. PIII was originally envisioned as a conformal ion implantation technology for surface modification of materials, but it also offers the advantages of high dose rates even at low energy and single wafer implants over large areas. Such advantages are becoming very important for semiconductor manufacturing. particularly for 300 mm wafers. The technique has found many applications in semiconductor processing and is now a commercial technique in the ion-cut process to synthesize silicon-on-insulator (SOI). In this paper, some of our recent work oil the control of contamination in semiconductor PIII, steady-state direct-current PIII, as well as blue light emission from porous silicon treated by carbon PIII are described.