SOI material technology using plasma immersion ion implantation

Silicon on insulator (SOI) devices have many attractive applications in integrated circuit technology. The high cost of manufacturing the SOI wafers, however, prevents it from being widely accepted for mass production. Separation by plasma implantation of oxygen (SPIMOX), an extremely high through-put SIMOX formation process using plasma immersion ion implantation (PIII) has demonstrated promising results. In this paper, an improvement on the SPIMOX process is presented. High-dose implantation is a costly procedure for the "smart cut" process. A low cost, high through-put implantation by hydrogen or helium plasma is demonstrated as a feasible, novel process for SOI technology using PIII.