Plasma immersion Ar ⁺ ion implantation induceddisorder instrained InGaAsP multiple quantum wells

The authors report the disordering in compressively strained InGaAsP/InP multiple quantum wells induced by 20 keV Ar+ plasma immersion ion implantation. With an Ar+ dose of 1016 cm–2 and a subsequent standard furnace annealing at 650°C for 90 min, the implanted sample exhibits an extra blue-shift of about 20 nm in comparison to the unimplanted control sample. For a sample that has been partially masked during implantation, a sharp intermixing step is observed after the 650°C anneal, indicating that the technique has the potential of introducing a localised disordering effect and, hence, may be a viable fabrication technique for integrated photonic devices.