On the broadening of energy levels in a quantum dot-based tunnel transistor

Summary form only given. The problem of energy level broadening in a quantum dot coupled to a conducting wire is important because it directly influences the on-off ratio of quantum dot-based tunnel transistors. The transistor off-current increases as the energy tail of the broadening function becomes heavier. Detailed investigations of the tail of the broadening function can give us information regarding the viability of tunnel transistors as future energy-efficient replacements of the conventional MOSFET.