Spin-valley locked excited states spectroscopy in a one-particle bilayer graphene quantum dot
Article 2024 en
Authors
HD
Hadrien Duprez
SC
Solenn Cances
AO
Andraz Omahen
Abstract
1 min read
Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom, stemming from the crystal lattice symmetry, is a robust quantum number that can therefore be harnessed for this purpose. The simplest implementation of a valley qubit would rely on two states with opposite valleys as in the case of a single-carrier bilayer graphene quantum dot immersed in a small perpendicular magnetic field (B<sub>⊥</sub> ≲ 100 mT). However, the single-carrier quantum dot excited states spectrum has not been resolved to date in the relevant magnetic field range. Here, we fill this gap, by measuring the parallel and perpendicular magnetic field dependence of this spectrum with an unprecedented resolution of 4 μeV. We use a time-resolved charge detection technique that gives us access to individual tunnel events. Our results come as a direct verification of the predicted spectrum and establish a new upper-bound on inter-valley mixing, equal to our energy resolution. Our charge detection technique opens the door to measuring the relaxation time of a valley qubit in a single-carrier bilayer graphene quantum dot.
Artem O. Denisov, Veronika Reckova, Solenn Cances, Max J. Ruckriegel, Michele Masseroni, Christoph Adam, Chuyao Tong, Jonas D. Gerber, W. Huang, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, K. Ensslin, Hadrien Duprez
Artem O. Denisov, Veronika Reckova, Solenn Cances, Max J. Ruckriegel, Michele Masseroni, Christoph Adam, Chuyao Tong, Jonas D. Gerber, W. Huang, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, K. Ensslin, Hadrien Duprez
Rebekka Garreis, Chuyao Tong, Jocelyn Terle, Max J. Ruckriegel, Jonas D. Gerber, Lisa Maria Gächter, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, K. Ensslin, W. Huang
Discussion(0)
No comments yet. Be the first to comment.