Observation of solid phase epitaxial growth of amorphous SiGe on Si(100) substrate

The solid phase hetero-epitaxial growth of amorphous SiGe on Si(100) substrate has been investigated in this paper. The experimental results indicate that the solid phase epitaxy of the heterostructure Si/sub 1-x/Ge/sub x//Si can be achieved with different compositions through high temperature thermal processes such as boron diffusion, annealing and oxidation.