Novel CMOS compatible cavity enhanced Ge/SOI photo-detector based on secondary photoconductivity

Subal Sahni; Eli Yablonovitch; J. Liu; Ya‐Hong Xie

doi:10.1109/cleo.2006.4627960

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Novel CMOS compatible cavity enhanced Ge/SOI photo-detector based on secondary photoconductivity

Article 2006 en

Abstract

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An integrated Ge-on-SOI photo-detector based on secondary photo-conductivity is proposed and demonstrated. A 1mW beam at 1.55μm creates charge separation in the Ge thereby changing the resistivity of the underlying Silicon by ∼3%.

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