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Germanium-on-SOI photo-detector based on an FET structure — Subal Sahni (2007) | RDL Network
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Germanium-on-SOI photo-detector based on an FET structure
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Eli Yablonovitch
University of California, Berkeley
Germanium-on-SOI photo-detector based on an FET structure
Article
2007
en
Authors
+1 more
SS
Subal Sahni
Eli Yablonovitch
University of California, Berkeley
JL
J. Liu
Abstract
1 min read
An integrated Ge-on-SOI photodetector with an FET structure, based on secondary photoconductivity is demonstrated. The Ge gate absorbs ~100 nW of 1.55μm light, thereby modulating the conductance of the Silicon channel by a factor of 25.
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