Germanium-on-SOI photo-detector based on an FET structure

Subal Sahni; Eli Yablonovitch; J. Liu; Ya‐Hong Xie

doi:10.1109/cleo.2007.4452667

Abstract

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An integrated Ge-on-SOI photodetector with an FET structure, based on secondary photoconductivity is demonstrated. The Ge gate absorbs ~100 nW of 1.55μm light, thereby modulating the conductance of the Silicon channel by a factor of 25.

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