Phase modulator based on silicon-on-insulator (SOI) rib waveguide

This paper presents the study of electrical characteristic of phase modulator in the carrier injection mode. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. In summary, the phase modulator device required 0.035mA drive current to get π phase shift at wavelength 1.55μm meanwhile 0.066mA drive current is required for the 1.3μm wavelength.