New layout concepts in MW-scale IGBT modules for higher robustness during normal and abnormal operations

This paper presents six different layout designs for MW-level Insulated-Gate Bipolar Transistor (IGBT) modules. The aim is to optimize the normal switching and abnormal short circuit performances of IGBT modules in terms of stray inductance reduction and inductance coupling cancellation. Using the Finite-Element-Method AnSYS Q3D Extractor, electromagnetic simulations are conducted to extract the self and mutual inductance from the six different layouts. PSpice simulations are used to reveal that the stray parameters inside the module play an important role under normal and abnormal operations, and thus the best performing layout strategies can be selected. The prototypes are fabricated to validate the results of the Q3D simulation analysis, in which the self-inductance is measured by using a high precision impedance analyzer.