Наблюдение областей отрицательной дифференциальной проводимости и генерации тока при туннелировании через нульмерные уровни дефектов барьера h-BN в гетероструктурах графен/h-BN/графен
Физика и техника полупроводников 53(8): 1058-1058
Article 2019 English
Authors
ЮХ
Ю.Н. Ханин
ЕВ
Е. Е. Вдовин
АМ
А. Мищенко
Abstract
1 min read
Tunneling and magnetic tunneling are investigated in graphene/ h -BN/graphene van der Waals heterosystems. Two new types of systems are found, in which negative differential conductivity regions are implemented due to resonant tunneling through defect levels in the h -BN barrier, and current caused by their presence is generated.
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