Роль структурных несовершенств графена в резонансном туннелировании через локализованные состояния в h-BN барьере ван-дер-ваальсовых гетероструктур

Investigated resonant tunneling through defect levels in h-BN barrier van der Waals heterostructures. The effect of multiplication of tunnel resonances through these levels was found, due to the influence of a high degree of defectiveness of the structure of the neighboring layer of graphene, created by intentionally processing in plasma. Various mechanisms of such influence are discussed.