Monolithic varactor tuned RF amplifier IC using ion implantation

K. E. Manchester; Paul Kim Ho Chu

doi:10.1109/isscc.1973.1155139

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Monolithic varactor tuned RF amplifier IC using ion implantation

Article 1973 en

Abstract

1 min read

Ion implantation has been used in the fabrication of components for a varactor-tuned RF amplifier IC having a gain of over 20 dB and tunable from 50-76 MHz. Amplifier consists of a varactor, resistor and dual-gate MOSFET devices on a 48 × 60-mil chip.

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