Modeling of a Silicon-Carbide MOSFET With Focus on Internal Stray Capacitances and Inductances, and Its Verification

This paper describes a compact model for a silicon-carbide (SiC) MOSFET, which features both characterization and modeling of a new drain-gate capacitor. In addition, the internal gate resistance and the internal stray inductances of the discrete package are experimentally evaluated and modeled by a newly-proposed method. The gate drive circuit is also modeled and involved in this simulation. The comprehensive modeling procedure is also considered, which offers an efficient modeling process. The model shows excellent agreements in transient behavior of both gate drive circuit and main power circuit between experimental and simulated waveforms. The comparison shows accurate reproducibility of a rate of drain-source voltage change and a rate of drain-current change within an error of 15%, which could not be realized with the conventional stray capacitance models. This successful validation indicates that the developed model would offer a new modeling concept and be expected to open up the possibilities of the simulation study for evaluating and designing detailed performance of SiC-MOSFETs.