Microcavities or bubbles formed by hydrogen and helium plasma immersion ion implantation (PIII) possess many interesting properties. For instance, they emit light similar to porous silicon, but since they are buried, the optical properties are not affected by surface conditions such as those encountered by conventional porous silicon materials. These bubbles also form excellent internal gettering sites for metal impurities and are stable even at high temperature. Last but not least, the ion-cut/bonding technology utilizing the stress created by these microcavities to achieve thin film transfer is used to fabricate silicon-on-insulator (SOI).
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