Local Source Plasma Ion Implantation

Summary form only given. During conventional plasma ion implantation, the plasmas are generated uniformly in the vacuum chamber and then the target to be treated is negatively biased. Consequently, all the exposed surfaces are implanted simultaneously. In this paper, a novel plasma ion implantation technique referred to as local source plasma ion implantation is presented. The plasma is produced only near the surfaces to be implanted. The plasma is sustained using the hollow cathode radio-frequency discharge mode with or without assistance of external magnetic field. In conjunction with the previously proposed concept of non-uniform plasma ion implantation, the technique is more suitable for implantation of local areas, for instance, local part of a large component, side wall of trench, inner surfaces of cylindrical bore, etc. The paper focuses on the plasma dynamics and influence of the processing parameters on the implantation behavior