Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory

Yihang Du; Lin Gu; Zhuangzhuang Wang; Chun Yao; Xiaodong Mu; Dongling Zhong

doi:10.1007/s10854-023-11889-3

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Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory

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