Impact of Parasitic Parameters on GaN HEMT Driving Module for Totem-pole Bridgeless PFC Converter

Gallium nitride high electron mobility transistor (GaN HEMT) has striking effect in many fields due to the absence of parasitic diodes, ultra-high switching speed and small on-state resistance. However, it also makes GaN HEMT sensitive to parasitic parameters which limits the reliable use of GaN HEMTs at higher power levels. In this paper, the effects of parasitic parameters on gate-source voltage, drain-source voltage and output current of GaN HEMT driving are investigated by establishing a circuit-level analysis model of GaN HEMT driving module. Meanwhile, a feasible driving scheme which suppressed the influence of parasitic parameters is proposed. The double-pulse test experiment verifies the effectiveness of the proposed driving scheme. Finally, the GaN HEMT half-bridge driving module is successfully applied in 1.5kW totem-pole bridgeless Boost PFC converter.